according to foreign media reports, on Thursday at the University of Texas scientists have created the world's first silicon transistor ene, the thickness of only one atom. With this transistor, future scientists may someday produce less energy, power, faster chips.
With hot graphene, another similar nanometer new materials also aroused great interest academic material, which is silicon-ene (Silicene). This material may become a new cornerstone of future IT technology. This transistor has a huge potential for computer scientists Silylene is a more interesting than graphene materials.
This invention is contrary to many observers by surprise, although this atomic transistor because of its instability, there is only a few minutes. But in fact, before this, Silylene just a theoretical material, based on no one thought it would be so fast transistors appear. University of Texas team in a vacuum first use of silver-based platform to create a condensed atomic layer, and then seal it with alumina. Then, peel Silylene material from the silver-based platform, leaving a thin layer of silver and aluminum as protection. Finally, part of the protective layer is scraped metallic silver to create a basic transistor and can work.
The scientists plan to continue refining the production process, in the short term in order to create a longer lifespan Silylene transistors. However, where there are still many difficulties to overcome, because very unstable Silylene use in the real world. But the scientists said, "This is a major breakthrough, low manufacturing technology and original equipment manufacture Silylene the first time." There is no doubt this is a very amazing creation, but whether this development of new computing devices remains to be seen.
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